IC Suppliers Product Index 2
2DI200A-020
Price: 1-10 USD
power transistor module, 300V, 8A, 1000W, free wheeling diode, high DC current gain, insulated type
2DI150D-050
Price: 1-10 USD
power transistor module, 600V, 1380W, 150A, free wheeling diode, high DC current gain, insulated t...
2MBI75P-140
Price: 30-41 USD
IGBT module, 1400V, 100A, Wide RBSOA, high short-circuit withstand capability, Low loss
2MBI75N-060
Price: 21-29 USD
IGBT module, 600 V, 75A, Square RBSOA, Low Saturation Voltage, Less Total Power Dissipation
2753B
Price: 1-10 USD
2753B, SOP, Integrated Circuits, Bel Fuse Inc
29LV040CQC-90G
Price: 1-50 USD
4-mega bit Flash memory, PLCC32, -0.5 V to +4.0 V, 200 mA, Low power consumption, 512K bytes
27SF020-70-3C-NHE
Price: 1-50 USD
CMOS, PLCC, high performance SuperFlash technology, -0.5V to VDD+0.5V, 100 mA
2DI75D-050A
Price: 24-41 USD
power transistor module, 600V, 75A, 350W, high DC current gain, insulated type
2MBI200U4H-120
Price: 73-108 USD
IGBT module, 1200V, 300A, 2.2nF, 2MBI200U4H-120, Fuji Electric
2MBI150U4H-120
Price: 68-100 USD
IGBT module, 2MBI150U4H-120-50, Fuji Electric, 200A, 2500 VAC
2MBI100N-060
Price: 28-37 USD
MODULE, IGBT module, High speed switching, Voltage drive, ±20V, 400W, 3.5N·m
2SA970
Price: 0.01-1 USD
Low Noise Audio Amplifier, TO-92, -120 V Collector-base voltage, -100 mA Collector current, 300 mW...
2SA1015-GR
Price: 0.01-1 USD
PNP Silicon, Plastic-Encapsulate Transistor, TO-92, 0.15A Collector-current, 50V Collector-base Vo...
2MBI300S-120
Price: 1-2 USD
IGBT module, 1200V, 600A, 2500mW, High speed switching, Voltage drive, Low inductance module struc...
24AA256T-I/SM
Price: 0.2-0.4 USD
256Kbit, 400KHz, 8soic, cmos serial eeprom, Low-Power CMOS Technology, Pb-Free and RoHS Compliant
2MBI150U4B-120-50
Price: 1-5 USD
150A,IGBT Module, Voltage drive, 1200 V, High speed switching, Voltage drive, Low inductance
2MBI400N-060
Price: 1-2 USD
IGBT module, 600V,400A, Low Saturation Voltage, Less Total Power Dissipation, Fuji Electric
2N3055
Price: 0.1-1 USD
Complementary power transistors, TO-3, 70 V Collector-Emitter Voltage, 15 A Collector Current
2N6028
Price: 0.1-2 USD
Programmable Unijunction Transistor, TO-92, 5.33mm Body Height, Low On-state Voltage
2N6027
Price: 0.1-2 USD
Programmable Unijunction Transistor, TO-92, 5.33mm Body Height, Low On-state Voltage
2N5172
Price: 0.1-2 USD
NPN General Purpose Amplifier, Package TO-92, No of Pins 3, Container, 25 Vdc Collector-Emitter Vo...
2N4416A
Price: 2-10 USD
N-Channel JFET, High Frequency Amplifier, CAN, 10 mA Gate Current, 300 mW Power Dissipation
218S6ECLA13FG
Price: 9.25-12.8 USD
218S6ECLA13FG, FCBGA, ATI Technologies Inc
2SC5200
Price: 0.1-10 USD
npn triple diffused type, Transistor, TO-3P, 230V, 15A, 150W, power amplifier
2SA1943
Price: 0.1-1 USD
Power Amplifier Applications, TO-3PL, -230 V High collector voltage, -1.5 A Base current, 150 W
2MBI300P-140
Price: 10-35 USD
IGBT Module, 2MBI300P-140, 1400 V Collector-Emitter Voltage, 2500 W Power Dissipation
2DI150MA-050
Price: 10-25 USD
power transistor module, High voltage, 600V, 150A, 620W Pc, Including Free Wheeling Diode, Insulat...
2MBI100NC-120
Price: 10-25 USD
IGBT module, 1200 V Collector-Emitter Voltage, Low Saturation Voltage, 100 A Continuous
2MBI150N-060
Price: 10-20 USD
N series, IGBT dodule, 600V Collector-Emitter Voltage, 150A, Power Dissipation 600 W
2MBI100-060
Price: 10-35 USD
MODULE, IGBT module, High speed switching, Voltage drive, ±20V, 400W, 3.5N·m
2SA1797T100Q
Price: 0.095-0.15 USD
power transistor, 50V, 3A, SOT-89, Low saturation voltage, Rohm
2MBI75U4A-120
Price: 32-45 USD
IGBT Module U-Series, 1200V, 75A, High speed switching, Low inductance module structure
2MBI75L-060
Price: 10-20 USD
IGBT module, 600V, 75A, IGBT mold type, high speed switching, low saturation voltage
2MBI200L-060
Price: 10-30 USD
IGBT module(L series), Fuji Electric, 600V, 800W, 300A, high speed switching
2MBI400N-060
Price: 10-35 USD
IGBT module, 600V,400A, Low Saturation Voltage, Less Total Power Dissipation, Fuji Electric
2DI150D-050
Price: 10-35 USD
power transistor module, 600V, 1380W, 150A, free wheeling diode, high DC current gain, insulated t...
2SC2879
Price: 1-100 USD
transistor, 2~30MHz SSB, linear power amplifier, low supply voltage, TO-59, 45V Collector Base vol...
2DI100D-050
Price: 10-35 USD
power transistor module, High voltage, 600V, 100A, 620W Pc, Including Free Wheeling Diode, Insulat...
2MBI300LB-060
Price: 10-39 USD
600V / 300A, 2 in one-package, MODULE, High speed switching, Voltage drive, Low inductance, 1200 W...
2MBI400L-060
Price: 10-35 USD
600V / 400A, 2 in one-package, MODULE, High speed switching, Voltage drive, Low inductance, 1600 W...
2MBI300N-060
Price: 50-100 USD
600V / 300A, 2 in one-package, DIP, High speed switching, Voltage drive, Low inductance, 1100 W Ma...
2MBI75N060
Price: 50-100 USD
IGBT, 600V, 75A, Square RBSOA, MODULE, Low Saturation Voltage, Less Total Power Dissipation
2SC2905-01
Price: 10-20 USD
silicon NPN, epitaxial planar transistor, MIT, 520MHz, emitter ballansted construction, 4.8dB, lo...
2DI300A-050
Price: 1-100 USD
power transistor module, 600 V, 300 A, high DC current gain, high voltage
2SK3019
Price: 0.1-100 USD
2.5V, drive Nch MOS FET, Low voltage drive, 400mA, 30V, Fast switching speed
2SK3607-01MR
Price: 0.1-2 USD
N-channel silicon power MOSFET, TO220F, 200 V, High speed switching, Low on-resistance
2sk4111
Price: 0.1-2 USD
Silicon N Channel, MOS FET, switching regulator applications, TO220F, 2.0 to 4.0 V, 100 μA
2SK3469
Price: 0.1-2 USD
N-channel silicon power MOSFET, TO220F, 500 V, Low on-resistance, High speed switching
2SK2876
Price: 0.1-2 USD
N-channel MOS-FET, FAP-IIS Series, 500 V, Low On-Resistance, High Speed Switching
2SK2611
Price: 0.1-2 USD
field effect transistor, TO-3P, 900 V, 100 μA, 150 W, 663 mJ, 2.0~4.0 V, 100 μA
2SK2313
Price: 0.1-2 USD
field effect transistor, TO3P, 60V, 150W, 100 A, Silicon N Channel MOS Type
2SK1020
Price: 0.1-2 USD
N-channel silicon power MOSFET, TO220, 500 V, Low on-resistance, Low driving power
2SA1244-Y
Price: 0.1-2 USD
transistor, SOP, -60 V, 1.0 W, -1 A, 2SA1244-Y, Toshiba Semiconductor
2SK3482-Z-E1
Price: 1-4 USD
TO252, N-channel, power MOS FET, Low on-state resistance, 18 A, 3600 pF, 4.5 V
2SK2645
Price: 1-4 USD
TO-220, N-channel MOS-FET, High Speed Switching, Low On-Resistance, ± 30V, 50 W
2SK2611
Price: 1-4 USD
TO-3P, TOSHIBA field effect transistor, silicon N channel, MOS type, 720 V, 100 μA
2SK2610
Price: 1-4 USD
Field Effect Transistor, TO-3P, 900V, 5 A, 15 mJ, 150 W, Low drain-source, Enhancement mode
2SC5859
Price: 1-4 USD
transistor, TO-3P, silicon NPN triple diffused mesa typ, 1700 V, 210 W, 46A, Low Saturation Voltage
2N3866
Price: 1-10 USD
Silicon NPN RF Transistor, TO39, 55V, 2.0A, 5.0W, 2N3866, Central Semiconductor Corp
2MBI75N-120
Price: 49.52-57.14 USD
IGBT module, 2MBI75N-120, 1200 V, 75A, Square RBSOA, Low Saturation Voltage, Less Total Power Diss...
216-0707001
Price: 5-10 USD
BGA, 216-0707001, Integrated Circuits, ATI Technologies Inc.
218S7EBLA12FG
Price: 5-10 USD
218S7EBLA12FG, BGA, Advanced Micro Devices
216-0729042
Price: 10-18 USD
VGA Card, BGA, 800MHz
216-0728014
Price: 5-12 USD
216-0728014, BGA, chipset IC, ATI Technologies Inc.
218S6ECLA21FG
Price: 5-12 USD
218S6ECLA21FG, BGA, Advanced Micro Devices
216DCCDBFA22E
Price: 1-1.5 USD
216DCCDBFA22E, BGA, Integrated Circuits, ATI Technologies Inc.
222233820104
Price: 0.002-0.005 USD
interference suppression, film capacitor, DIP-2, 7.5 to 27.5 mm lead pitch, Vishay Siliconix
2N6081
Price: 1-100 USD
TO-55, RF, microwave transistor, 230MHz FM mobile applications, 36V, 2.5A
20L6P45
Price: 1-100 USD
RECTIFIER MODULE, DIP-5, 800V Repetive Peak Reverse voltage, 1.5 Nm Screw Torque, 2000V Isolation ...
2N6080
Price: 1-100 USD
TO-55, RF, microwave transistor, 230MHz FM mobile applications, 36V, 2.5A
2sk3476
Price: 1-10 USD
high frequency, Power Amplifier, VDSS 20 V, VGSS 10 V, Drain current ID 3 A, 7.0 W (min)
2SK2975
Price: 1-10 USD
MOS FET, transistor, VHF/UHF power amplifier, High efficiency, 450MH, 30dBm, Mitsubishi Electric S...
2SC2782
Price: 1-10 USD
silicon NPN epitaxial planar type, transistor, surface mount, 36 V, 220 W, 80W, 2SC2782, Toshiba S...
2n3906
Price: 1-10 USD
General Purpose Transistors, PNP switching transistor, TO-92-3, 625mW, ROHS compliant
2n3904
Price: 1-10 USD
general purpose, PNP Silicon, PNP switching transistor, 625mW, 1.5 Watts, 40 Vdc
2n5087
Price: 1-10 USD
PNP General Purpose Amplifier, TO-92-3, -100 mA, -50 V, Fairchild Semiconductor, 2n5087
2n5088
Price: 1-10 USD
NPN General Purpose Amplifier, TO-92-3, 625mW, 30V, 100 mA, 1μA to 50 mA, Fairchild Semiconductor
2n5485
Price: 1-10 USD
N-Channel RF Amplifier, TO-226-3, 25 V, 10 mA, Sourced from Process 50, 350mW, Fairchild Semicondu...
2n5458
Price: 1-10 USD
low level audio amplifier, switching transistor, TO-226-3, 625mW, 25 V, 10 mA, Fairchild Semicondu...
2n5457
Price: 1-10 USD
low level audio amplifier, switching transistor, TO-226-3, 25 V, 10 mA, 62.5mW, 2n5457, Fairchild ...
2n5952
Price: 1-10 USD
N-Channel RF Ampifier, TO-226-3, 30 V, 10 mA, Sourced from process 50, 2n5952, Fairchild Semicondu...
2N2646
Price: 1-10 USD
Silicon PN Unijuction Transistor, DIP, low emitter reverse current, 200nA, low peak point current
2N2647
Price: 1-10 USD
DIP, silicon planar unijunction transistor, 30 V, 2 A, 300 mW, Low emitter reverse current
2SK1341
Price: 1-10 USD
DIP, silicon N-channel, MOS FET, High speed switching, Low on-resistance, 100 W
2sc1946A
Price: 1-10 USD
silicon NPN epitaxial planar type, transistor, 35V, 7A, 3W, high power gain, low thermal resistance
2SC1945
Price: 1-10 USD
silicon NPN epitaxial planar, transistor, HF band mobile radio, 14W, 27MHz, TO-220
2SC1969
Price: 1-10 USD
silicon NPN epitaxial transistor, TO-220, 60V, High power gain, 6A, 1 .7W/20W, Gpe≥12dB
2sc2290
Price: 1-10 USD
Toshiba transistor, 2~30MHz, SSB, linear power amplifier, 45V, 175W, 20 A, 60Wpep
2sc2879
Price: 1-10 USD
transistor, 2~30MHz SSB, linear power amplifier, low supply voltage, TO-59, 45V Collector Base vol...
2N5686G
Price: 3-3.2 USD
50A, 80V, TO3 package, 50 ampere, silicon power transistor, 300 watts, High-Current, 5.0Vdc