IC Suppliers Product Index 2
2MBI300S-120
Price: 15-20 USD
IGBT module, 1200V, 600A, 2500mW, High speed switching, Voltage drive, Low inductance module struc...
2MBI75S-120
Price: 15-33 USD
IGBT module, Low Losses And Soft Switching, NPT-Technology, 2MBI75S-120, 1200V
2MBI100PC-140
Price: 15-32 USD
IGBT Module, MODULE, Easy to connect, Wide RBSOA, Low loss and soft-switching
2MBI150N-060
Price: 15-32 USD
N series, IGBT dodule, 600V Collector-Emitter Voltage, 150A, Power Dissipation 600 W
2MBI100NC-120
Price: 15-25 USD
IGBT module, 1200 V Collector-Emitter Voltage, Low Saturation Voltage, 100 A Continuous
2MI50F-050
Price: 20.5-42 USD
N-channel silicon power MOS-FET, 500V, 150A, 400W, low on-resistance, high current
2RI100G-160
Price: 15-35 USD
power diode module, Fuji Electric, 2RI100G-160, 1600V, surge current 1200A
2MBI75N-060
Price: 30-45 USD
IGBT module, 600 V, 75A, Square RBSOA, Low Saturation Voltage, Less Total Power Dissipation
24LC1025-I/SM
Price: 0.3-0.8 USD
8SOIC, 1024K I2C CMOS Serial EEPROM, 128-byte page write buffer, Hardware write-protect
24C16W1
Price: 0.2-0.3 USD
24C16W1, SOP8, Catalyst Semiconductor inc, Integrated Circuits
216-0674022
Price: 8-12 USD
216-0674022, BGA, Chip IC, 12V, Advanced Micro Devices
200M/RC410ME/216ECP4ALA13FG
Price: 12.59-18.75 USD
200M/RC410ME/216ECP4ALA13FG, BGA, ATI Technologies Inc, Integrated Circuits
216BAAAVA12FG
Price: 16.2-18.56 USD
216BAAAVA12FG, BGA, ATI Technologies Inc, Integrated Circuits, 128MB, VGA Video Card
2N7002DW-7
Price: 0.01-0.2 USD
dual, N-channel, enhancement mode, field effect transistor, 60V, SOT363, 200mW
24LC02B-I/P
Price: 0.13-0.14 USD
2Kbit, 8DIP, lectrically Erasable PROM, 2.5 V ~ 5.5 V, 400kHz, Lead Free
2MBI200NB-120
Price: 18-36 USD
IGBT module, 200A, 2500 V, 1500 W, Low Saturation Voltage, Fuji Electric
2SC3102
Price: 4-7 USD
NPN epitaxial planar type transistor, TO-59, High power output, 35V, 170W
2SC5198
Price: 0.1-10 USD
Silicon NPN Triple Diffused Type, TO-3P, Transistor, 140V, 1A, 100W, High breakdown voltage
2SA1941
Price: 0.1-10 USD
2SA1941, transistor, Toshiba Semiconductor, TO-3P, -140V, -10A, High breakdown voltage
2SA1694
Price: 0.1-10 USD
Silicon PNP Epitaxial Planar Transistor, TO-3P, -120A, -6V, 80W, Sanken electric
2N5485
Price: 0.1-1 USD
N-Channel RF Amplifier, TO-226-3, 25 V, 10 mA, Sourced from Process 50, 350mW, Fairchild Semicondu...
2N2219
Price: 0.1-1 USD
silicon planar epitaxial NPN transistor, TO-39, 60 V, 0.8W, 10μA, low leakage currents
2DI150MA-050
Price: 15-42 USD
high DC current gain, high speed switching, insulated type, power transistor module, 1200V
2MBI150SC-120
Price: 35-45 USD
IGBT module, 1200V, 200A, 1000W, High Short Circuit, Low Losses
2MBI200N-060
Price: 30-40 USD
IGBT modlue, 600V, 780W, 400A, High speed switching, Low inductance module structure
2SC3203
Price: 0.1-0.2 USD
silicon NPN transistor, TO92, 35V, -800mA, 600mW, Excellent hFE vs
2N6284
Price: 1-5 USD
silicon epitaxial-base NPN power transistor, IC, 100V, 20A, Stmicroelectronics preferred salestypes
2SK1028
Price: 20-30 USD
RF power MOS FET, 100V, 125W, 6A, VHF TV broadcast transmitter
24LC256-E/SN
Price: 0.2-0.3 USD
Electrically Erasable PROM, 256 Kbit, SOP, 6.5V, Low-power CMOS technology
2SK2611
Price: 0.56-0.68 USD
field effect transistor, TO-3P, 900 V, 100 μA, 150 W, 663 mJ, 2.0~4.0 V, 100 μA
24LC512-I/P
Price: 0.58-0.69 USD
Electrically Erasable PROM, 1.8V to 5.5V, DIP-8, 2-wire serial interface bus
24LC01B-I/P
Price: 0.2-0.3 USD
Electrically Erasable PROM, SOP, 1K-bit, 6.5V, Low power CMOS technology
2SK2202
Price: 0.8-0.94 USD
silicon N-Channel MOS FET, TO-220F, 14A, 120V, 20W, Low drive current
2SK2003-01MR
Price: 0.58-0.63 USD
N-channel MOS-FET, TO-220F, 600V, 4A, 40W, Low On-Resistance, High Speed Switching
2SK1807
Price: 0.7-0.79 USD
silicon N-Channel MOS FET, TO-220, 900V, 4A, 60W, High speed switching
2SK1306
Price: 0.4-0.48 USD
Silicon N Channel MOS FET, TO-220F, 100V, 15A, 30W, Low on-resistance
2SJ350
Price: 0.65-0.79 USD
Silicon P Channel MOS FET, TO-220F, -120V, -12A, 20W, Low on-resistance
2SJ222
Price: 0.5-0.63 USD
Silicon P-Channel MOS FET, TO-220F, –100V, –20A, 35W, High speed switching
2SC3133
Price: 6.9-7.8 USD
NPN epitaxial planar type transistor, TO-220, High power output, 5V, 1.5W
2SC458C
Price: 0.12-0.16 USD
silicon NPN epitaxial, TO-92, 30V, 100mA, Renesas Technology Corp
2N5566
Price: 2.5-5 USD
Matched N-Channel JFET Pair, TO-71, –40 V, 650 mW, Low Offset/Drift Voltage, Low Noise
2MBI200S120
Price: 79-115 USD
1200V, 200A, Low inductance module structure, High speed switching, IGBT module
2SK2225
Price: 4.5-4.8 USD
2SK2225, Silicon N Channel MOS FET, Renesas Technology Corp, TO-3PF, Channel dissipation 50 W
2MBI150TA-060
Price: 50-79 USD
IGBT power module, 600V, 150A, Less Total Power Dissipation, Low Saturation Voltage
2SK1938
Price: 0.5-0.9 USD
Power MOSFET, TO-220, High Speed Switching, Low On-Resistance, Low Driving Power
2SK2564
Price: 0.4-0.5 USD
VX-2, Series Power MOSFET, 600V, 8A, TO220, Avalanche resistance guaranteed, 0.5 Nm
2SD1264
Price: 0.2-0.3 USD
Silicon NPN, Power Transistors, TO220, 3A Peak collector current, 30W Collector power dissipation
2SC4083 T106P
Price: 0.045-0.05 USD
11V, 50mA, SOT-323, High-Frequency Amplifier Transistor, 3.2GHz, Collector-base voltage 20V
2SD2703
Price: 0.078-0.08 USD
General purpose amplification, SOT-323, collector current 1A, power dissipation 0.4W
2N7002KT1G
Price: 0.015-0.018 USD
D-MOS transistor, SOT23, High-speed switching, 60 V, 380 mA, Single, N-Channel
2N3904S
Price: 0.01-0.1 USD
Epitaxial planar npn transistor, SOT23, Collector Emitter Voltage 40 Vdc, 350 mW
2MBI300N-060-04
Price: 40-50 USD
600V, 300A, 2 in one-package, IGBT, High speed switching, Voltage drive, Low inductance, 1100 W Ma...
24LC04BT-ISN
Price: 0.1-0.1 USD
4K I2C Serial EEPROM, SOP-8, Read current 1 mA, Page Write Time 3 ms, Factory Programming Available
216PQKCKA15FG
Price: 47.3-48.5 USD
216PQKCKA15FG, BGA, ATI Technologies Inc.
216-0707009
Price: 23.5-25 USD
216-0707009, BGA, ATI Technologies Inc.
27F/012-S
Price: 5-25 USD
27F/012-S, subminiature DIP relay, High switching capacity 60W, 125VA
206036-1
Price: 2-5 USD
5000Mohm, 13A, 250V, AMP Circular Connector, TYCO ELECTRONICS, 206036-1
2SK3682-01
Price: 0.2-0.6 USD
N-channel silicon power MOSFET, Low on-resistance, Low driving power, TO-220AB, 500V
2SC2668-Y
Price: 0.026-0.03 USD
small reverse transfer capacitance, low noise figure, 0.70pF, TO92, 2SC2668-Y, transistor, 30V
2SC1946A
Price: 14-16 USD
silicon NPN epitaxial planar type, transistor, 35V, 7A, 3W, high power gain, low thermal resistance
2N5160
Price: 1-1.5 USD
PNP silicon RF power transistor, TO-39, high power gain, 2N5160, Motorola, Inc, -40Vdc
2N3866
Price: 0.59-1.3 USD
Silicon planar, epitaxial overlay transistor, TO-39, 800 MHz, Current-Gain Bandwidth Product
2N2907A
Price: 0.2-0.59 USD
60V PNP switching transistor, TO-18, high current, low voltage, 600mA, 2N2907A
2N2222A
Price: 0.19-0.6 USD
NPN switching transistor, TO-18, high current, low voltage, 800mA, 40V, 2N2222A
2SA1302
Price: 2-4 USD
power transistor, -15A, -200V, 150W, Silicon PNP Epitaxial Type, TO-3PL, Toshiba Semiconductor
2SC3281
Price: 2-4 USD
Transistor, TO-3PL, Silicon NPN Triple Diffused Type, 200V, 150W, Toshiba Semiconductor
2SC1969
Price: 1-100 USD
silicon NPN epitaxial transistor, TO-220, 60V, High power gain, 6A, 1 .7W/20W, Gpe≥12dB
2SK1739A
Price: 40-80 USD
TO, Toshiba, RF power MOS FET, 770 MHz, 80 V, ±20 V, 2SK1739A
2MB175S-120
Price: 15.8-158 USD
2MB175S-120, Fuji Electric, 1200 V, class IGBT module, 75A, Semiconductor Modules
2SC2246
Price: 1-15.8 USD
Silicon Power Transistor, High voltage, high speed, TO-3 package, 450V, 2SC2246
2120D
Price: 1-15.8 USD
2120D, Japan Radio Co.,ltd, DIP
2SD1623T
Price: 0.0001-5 USD
SOT, PNP, NPN, epitaxial planar silicon transistor, Large current capacity, 0.5 W, 1.3 W, 60 V
2SC5707
Price: 0.08-0.1 USD
TO252/SOT252, PNP / NPN, epitaxial planar, silicon transistor, Large current capacitance, 11A, 15W
2180LC
Price: 3.1-4 USD
Voltage Controlled Amplifier, ZIP8, sip8, Wide Dynamic Range, Wide Gain Range, 20 MHz, +20 V
2N4858
Price: 0.47-0.52 USD
2N4858, CAN3, N Channel MOSFET, Motorola, Inc, 40v, 50mAdc
2SK60
Price: 12-12.5 USD
Silicon N-Channel MOS FET, TO-3, ±1A, 20V, Low ON-resistance, High-speed switching
2SJ18
Price: 12-14 USD
silicon p-channel MOSFET, high speed, power switching, –600 V, TO-3, –0.5 A, 20 W
2SK176
Price: 10-12 USD
TO-3, silicon N-Channel MOS FET, Low on-resistance, Low drive current, 250 V, 75 W
2SJ56
Price: 13-14 USD
Silicon P-Channel MOS FET, Low Freq. Power Amplifier, TO-3, 200V, 125W
2SK135
Price: 10-12 USD
silicon p-channel MOSFET, low-frequency, power amplifier, 7A, ±14V, 100w
2SJ50
Price: 10-12 USD
TO-3, low frequency, power amplifier, High power gain, 7A, 14V
2SK134
Price: 18-22 USD
TO-3, low frequency, power amplifier, High speed switching, 7A, 14V
2SJ49
Price: 18-22 USD
p-channel MOSFET, low-frequency, power amplifier, TO-3, ±14V, -7A, 100w
2SJ18
Price: 10-15 USD
2SJ18, TO-3, Sony Corporation, Semiconductor Modules
2SK60
Price: 10-15 USD
Silicon N-Channel MOS FET, TO-3, ±1A, 20V, Low ON-resistance, High-speed switching
216PMAKA12FG
Price: 20-35 USD
graphic processor BGA chipset, BGA, 216PMAKA12FG, ATI Technologies Inc.
2DI300A-050D
Price: 40-78 USD
GTR Module, High Voltage, High DC Current Gain, High speed switching, Free Wheeling Diode
2SC2904
Price: 1-10 USD
silicon NPN epitaxial planar type, transistor, T-40, 50V, 22A, 7.8W, high gain, emitter ballansted...
2MBI450U4E-120
Price: 1-10 USD
IGBT module, 1200V, 900A, 2750W, 2MBI450U4E-120, Fuji Electric
2MBI200NK-060
Price: 1-10 USD
IGBT power module, Square RBSOA, Low Saturation Voltage, Less Total Power Dissipation, Overcurrent...